Author/Authors :
Liu، نويسنده , , Bitao and Han، نويسنده , , Boyu and Zhang، نويسنده , , Feng and Wen، نويسنده , , Yan and Zhu، نويسنده , , Ge and Zhang، نويسنده , , Jia and Wang، نويسنده , , Yuhua، نويسنده ,
Abstract :
Si–N-doped BaAl12O19:Mn2+ phosphors were synthesized by a conventional solid-state reaction. It reveals that an efficiently host absorption in the vacuum ultraviolet region, which could be ascribed to the restricted Reidinger defects and oxygen vacancies by the Si–N doping. A fortified energy transfer from host to the activators was observed because of the newly formed defect energy levels which generated from the un-equivalence substitution of Si–N for Al–O. The shorter decay time of 4.05 ms was obtained which due to the increased defect concentration. This result indicates that Si–N doping BaAl12O19:Mn2+ phosphors would meet the requirements of 3D PDPs.
