Room temperature novel chemical synthesis of Cu2ZnSnS4 (CZTS) absorbing layer for photovoltaic application

Cu2ZnSnS4 (CZTS) thin films have been prepared by a novel chemical successive ionic layer adsorption and reaction (SILAR) method. These films were annealed in vacuum at 673 K and further characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), UV–vis spectroscopy, electrical, and wettability studies. The X-ray diffraction studies showed the formation of kesterite structure of CZTS films. Scanning electron micrograph revealed the formation of densely packed, compact and large grained CZTS films. The CZTS films showed high optical absorption (104 cm−1) exhibiting band gap energy of 1.55 eV. Wettability test revealed the hydrophilic nature of CZTS films. The CZTS thin films showed semiconducting behavior with p-type electrical conductivity. Further photovoltaic activity of these films was studied by forming the photoelectrochemical cell.