Title of article
Structural and electrical properties of ternary Ru–AlN thin films prepared by plasma-enhanced atomic layer deposition
Author/Authors
Shin، نويسنده , , Yu-Ri and Kwack، نويسنده , , Won-Sub and Park، نويسنده , , Yun-Chang and Kim، نويسنده , , Jin-Hyock and Shin، نويسنده , , Seung-Yong and Moon، نويسنده , , Kyoung Il and Lee، نويسنده , , Hyung-Woo and Kwon، نويسنده , , Se-Hun، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
790
To page
793
Abstract
Ruthenium–aluminum-nitride (Ru–AlN) thin films were grown by plasma-enhanced atomic layer deposition (PEALD) at 300 °C. The Ru intermixing ratio of Ru–AlN thin films was controlled by the number of Ru unit cycles, while the number of AlN unit cycles was fixed to one cycle. The electrical resistivity of Ru–AlN thin film decreased with increasing the Ru intermixing ratio, but a drastic decrease in electrical resistivity was observed when the Ru intermixing ratio was around 0.58–0.78. Bright-field scanning transmission electron microscope (BF-STEM) and energy-dispersive X-ray spectroscopy (EDX) element mapping analysis revealed that the electrical resistivity of Ru–AlN thin film was strongly dependent on the microstructures as well as on the Ru intermixing ratio. Although the electrical resistivity of Ru–AlN thin films decreased with increasing the Ru intermixing ratio, a drastic decrease in electrical resistivity occurred where the electrical paths formed as a result of the coalescence of Ru nanocrystals.
Keywords
A. Thin films , B. plasma deposition , D. Electrical properties , D. Microstructure
Journal title
Materials Research Bulletin
Serial Year
2012
Journal title
Materials Research Bulletin
Record number
2101711
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