Room temperature deposition of IZTO transparent anode films for organic light-emitting diodes

This study was to investigate anodic electrode IZTO films deposited by pulsed DC magnetron sputter at room temperature with various oxygen partial pressures onto glass substrate and to analyze the structural, electrical, and optical properties, as well as the relationship between the chemical binding state of the surface and the characteristics of IZTO films. In addition, the prepared IZTO films were used to fabricate the organic light emitting diodes (OLEDs) as an anode layer to study the device performances. The IZTO film deposited at optimal oxygen partial pressure of 2.0% in sputtering process showed the best properties, such as a low electrical resistivity and high optical transmittance of <5.1 × 10−4 Ω cm and >80% in the visible wavelength of 400–800 nm, respectively. The OLED characteristics with the optimum condition showed good brightness and the lowest turn-on voltage of >10,000 cd/m2 and 4.67 V. These results indicate that IZTO films can be a promising candidate as an alternative TCO electrode material for flexible and OLED devices.