• Title of article

    Effects of intermediate metal layer on the properties of Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayers deposited on polymer substrate

  • Author/Authors

    Jung، نويسنده , , Yu Sup and Kim، نويسنده , , Kyung Hwan، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    3
  • From page
    2895
  • To page
    2897
  • Abstract
    Ga–Al doped ZnO/metal/Ga–Al doped ZnO multilayer films were deposited on polyethersulfone (PES) substrate at room temperature. The multilayer films consisted of intermediate Ag metal layers, top and bottom Ga–Al doped ZnO layer. The multilayer with PES substrate had advantages such as low sheet resistance, high optical transmittance in visible range and stable mechanical properties. From the results, sheet resistances of multilayer showed 9 Ω/sq with 12 nm of Ag metal layer thickness. Average optical transmittance of multilayer film showed 84% in visible range (380–770 nm) with 12 nm of Ag metal layer thickness. Moreover the multilayers showed stable mechanical properties than single-layered Ga–Al doped ZnO sample during the bending test due to the existence of ductile Ag metal layer.
  • Keywords
    B. Sputtering , A. Multilayers , A. Electronic materials , A. Thin films
  • Journal title
    Materials Research Bulletin
  • Serial Year
    2012
  • Journal title
    Materials Research Bulletin
  • Record number

    2102419