Microwave dielectric properties of Ba(Zn1/3Ta2/3)O3 ceramics doped with Nb2O5, MnO2 or V2O3

Dielectric materials with a high permittivity (ɛr), a high quality factor (Q) and a low temperature coefficient of the resonant frequency (τf) have become very important for the miniaturization of microwave devices, such as filters or antennas. In this work, Ba(Zn1/3Ta2/3)O3 (BZT) ceramics doped with Nb2O5, MnO2 or V2O3 were obtained by the conventional solid-state reaction method. We report on the compositional, structural and morphological characterization of BZT resonators, as well as on the influence of the dopant (type and quantity) and sintering temperature on their dielectric properties. The best microwave dielectric properties (ɛr ∼ 28.4 and Q × f ∼ 236 THz) were achieved in the case of 1% V2O3 doping and 1600 °C sintering temperature.