Author/Authors :
Vasil’eva، نويسنده , , N.V. and Spassky، نويسنده , , D.A. and Randoshkin، نويسنده , , I.V. and Aleksanyan، نويسنده , , E.M. and Vielhauer، نويسنده , , S. and Sokolov، نويسنده , , V.O. and Plotnichenko، نويسنده , , V.G. and Kolobanov، نويسنده , , V.N. and Khakhalin، نويسنده , , A.V.، نويسنده ,
Abstract :
Epitaxial films of Ce-doped Gd3(AlxGa1−x)5O12 with x = 0.00, 0.22, 0.31, 0.38 formula units were grown using liquid-phase epitaxy method, and their optical properties were studied. The emission of Ce3+ ions can be observed only when Al3+ ions are incorporated into the garnet structure, resulting in a shift of the 5d Ce3+ states from the conduction band to the bandgap. It is shown that the shift is caused by the cumulative effect of gradual low-energy shift of the lowest 5d level of Ce3+ and the raise of the garnet bandgap energy with increasing Al3+ concentration.
Keywords :
B. Epitaxial growth , A. Oxides , A. Thin films , D. Luminescence , D. Optical properties
