Title of article
Dopant occupancy and increased exposure energy of Zr:Yb:Ho:LiNbO3 crystals
Author/Authors
Dai، نويسنده , , Li and Jiao، نويسنده , , Shanshan and Xu، نويسنده , , Chao and Li، نويسنده , , Dayong and Lin، نويسنده , , Jiaqi and Chen، نويسنده , , Chuntian، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
4
From page
132
To page
135
Abstract
Yb:Ho:LiNbO3 crystals tridoped with various Zr4+ concentrations (0, 1, 2 and 5 mol%) were grown by Czochraski technique. Defect structure and dopant occupancy of Zr:Yb:Ho:LiNbO3 crystals were determined by IR transmission spectrum. The effective distribution coefficient of Zr ion increases with increasing ZrO2 concentration in the melts, which is near to one. The light-induced scattering of Zr:Yb:Ho:LiNbO3 crystals was quantitatively measured via the incident exposure energy. The exposure energy of Zr (5 mol%):Yb:Ho:LiNbO3 crystal is 49.33 J/cm2, which is two orders higher than that of Yb:Ho:LiNbO3 crystal in magnitude. The photoconductivity is key factor to understand the internal relationship between the dopant occupancy and exposure energy of the crystals.
Keywords
C. Infrared spectroscopy , D. Crystal structure , B. Crystal growth
Journal title
Materials Research Bulletin
Serial Year
2014
Journal title
Materials Research Bulletin
Record number
2105159
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