Author/Authors :
Zhu، نويسنده , , Yueqin and Zhang، نويسنده , , Zhonghua and Song، نويسنده , , Sannian and Xie، نويسنده , , Huaqing and Song، نويسنده , , Zhitang and Li، نويسنده , , Xiaoyun and Shen، نويسنده , , Lanlan and Li، نويسنده , , Xiao-Le and Wu، نويسنده , , Liangcai and Liu، نويسنده , , Bo، نويسنده ,
Abstract :
In this paper, Ni-doped Ge2Sb2Te5 (GST) was investigated for high speed phase change memory applications. Compared with GST, Ni0.3Ge2.8Sb2.2Te4.7 film exhibits a higher crystallization temperature (∼217 °C) and a better data retention ability (∼135 °C for 10 years). A reversible switching between set and reset can be realized by an electric pulse as short as 6-ns for Ni0.3Ge2.8Sb2.2Te4.7 based phase change memory. Furthermore, Ni0.3Ge2.8Sb2.2Te4.7 based cell shows good endurance up to 1.5 × 104 SET–RESET cycles during endurance test.
Keywords :
A. Amorphous materials , B. Sputtering , C. X-ray diffraction , D. Electrical properties , C. Transmission electron microscopy (TEM)
