Title of article
Growth and luminescent properties of scintillators based on the single crystalline films of Lu3−xGdxAl5O12:Ce garnet
Author/Authors
Zorenko، نويسنده , , Yu and Gorbenko، نويسنده , , V. and Vasylkiv، نويسنده , , Ja and Zelenyj، نويسنده , , A. and Fedorov، نويسنده , , A. and Kucerkova، نويسنده , , R. and Mares، نويسنده , , J.A. and Nikl، نويسنده , , M. and Bilski، نويسنده , , P. and Twardak، نويسنده , , A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2015
Pages
9
From page
355
To page
363
Abstract
The work is related to the growth of scintillators based on the single crystalline films (SCF) of Ce3+ doped Lu3−GdxAl5O12 mixed rare-earth garnets by Liquid Phase Epitaxy (LPE) method. We have shown, that full set of Lu3−GdxAl5O12 SCFs with x values ranging from 0 to 3.0 can be successfully crystallized by the LPE method onto Y3Al5O12 (YAG) substrates from the melt-solutions based on PbO-B2O3 flux. The absorption, X-ray excited luminescence, photoluminescence, thermoluminescence and light yield measurements, the latter under excitation by α-particles of 239Pu and 241Am radioisotopes, were applied for their characterization.
Keywords
Optical properties , Defects , crystal structure , Thin films , X-ray diffraction , epitaxial growth , oxides , Luminescence
Journal title
Materials Research Bulletin
Serial Year
2015
Journal title
Materials Research Bulletin
Record number
2106286
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