Preparation and luminescence characterization of GGAG:Ce3+,B3+ for a white light-emitting diode

We prepared Gd3Ga2Al3O12 (GGAG) co-doped with trivalent cerium and boron ions and investigated its luminescence properties as a function of the B3+ concentration. The luminescence intensity was enhanced markedly by adding B3+ as a co-dopant. The non-boron-doped GGAG:Ce3+ converted less than 10% of the absorbed blue light into luminescence. As the B3+ concentration increased, Q increased and reached a maximum of Q = 21% at 1.5 moles in GGAG:Ce3+. White light closer to daylight with good color-rendering index properties was generated with the proper combination of yellow emission from GGAG:Ce3+,B3+ and blue emission from a GaN chip.