IR laser-induced co-decomposition of gaseous trisilane and carbon disulfide

A TEA CO2 laser irradiation of gaseous mixtures of trisilane and carbon disulfide results in the decomposition of both compounds and chemical vapor deposition of solid Si/S/C/H polymeric films. The GCMS identification of volatile products and FTIR spectral and EDX-SEM analysis of the solid products allowed recognition of reaction of silylenes with S atoms as a major reaction route between products of decomposition of each edduct. The solid films are a blend of carbonaceous and polysilthiane structures that respectively possess low content of C–S–C bonds and high content of Si–S–Si bonds. The polysilthiane structures react with air moisture, evolve H2S and develop to polysiloxanes structures that become part of nanostructured thiocarbosiloxanes films.