Microstructural development during diffusion bonding of α-silicon carbide to molybdenum

Silicon carbide was joined to molybdenum by solid state bonding at temperatures ranging from 1200 °C to 1700 °C. The interfaces were characterized by scanning electron microscopy, electron probe microanalysis, and X-ray diffraction. Diffusion of Si and C into Mo resulted in a reaction layer with two main phases: Mo5Si3 and Mo2C. For temperatures higher than 1400 °C a ternary phase of composition Mo5Si3C was also formed, and at 1700 °C nucleation of MoC was observed.