Title of article :
High temperature corrosion and crack growth of SiCSiC at variable oxygen partial pressures
Author/Authors :
Jones، نويسنده , , R.H. and Henager Jr.، نويسنده , , C.H. and Windisch Jr.، نويسنده , , C.F.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Pages :
10
From page :
103
To page :
112
Abstract :
Thermal gravimetric analysis (TGA) and subcritical crack growth measurements of chemical-vapor-infiltrated SiC matrix reinforced with Nicalon fibres and with a 1 μm thick C fiber-matrix interface have been conducted at 1100 °C over O2Ar mixtures ranging from 0.25% to 20.0% O2. The TGA and interface recession measurements both gave linear reaction kinetics for O2 concentrations of 2.0% or less and a reaction order of unity. Subcritical crack growth measurements demonstrated that the crack velocity, in the stress-intensity-independent stage II regime, increases with increasing O2/Ar ratio. Also, the transition from stage II to the stress-intensity-dependent stage III regime is shifted to lower stress intensities with increasing O2/Ar ratio. A time-dependent crack growth model that incorporates creep of the bridging SiC fibers and the removal of the C interfacial layer by oxidation successfully explains the subcritical crack growth characteristics.
Keywords :
silicon carbide , Oxidation , Crack growth , Carbon interface
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Serial Year :
1995
Journal title :
MATERIALS SCIENCE & ENGINEERING: A
Record number :
2130647
Link To Document :
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