Analysis of SIMOX metal-oxide-semiconductor transistors operated in the high temperature range

A systematic investigation of the physical properties and performance of SIMOX silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors, operated from 210 to 625 K is presented. It is shown that SOI devices are attractive candidates for minimizing leakage currents at high temperature. The surface mobility follows conventional behaviour. The sensitivity of the SIMOX buried oxide to hot carrier injection is found to exhibit a maximum at an intermediate temperature, around 400 K.