Title of article :
III–V semiconductor properties for high temperature electronics
Author/Authors :
Hartnagel، نويسنده , , Hans L.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Pages :
7
From page :
47
To page :
53
Abstract :
A reliabily operating electronic circuitry for environmental temperatures up to 500 °C requires a satisfactorily wide energy gap, a good material stability and a suitable technology. These three points are reviewed regarding III–V semiconductors. Experimental results with AlxGa1−xAs are reviewed, which are usually monolithically associated with various types of sensors.
Keywords :
Heterostructures , High temperature electronics , Gallium arsenide , Sensors
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1995
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2130807
Link To Document :
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