A complementary III–V heterostructure field effect transistor technology for high temperature integrated circuits

A complementary III–V heterostructure field effect transistor (CHFET) has been developed which employs a high aluminium mole fraction aluminium gallium arsenide (Al0.75GaAs) interfacial layer between the gate metallization and the indium gallium arsenide In0.25GaAs channel. This produces a quasi-insulating gate structure which reduces the gate leakage current. Experimental and simulation data have been used to show the potential of the CHFET up to temperatures of 500 °C. Computer modelling has also been used to study the role of the heterostructure component parts, which has revealed the relative importance of each material in the successful operation of high temperature electronic devices and facilitated the prediction of further device improvements.