• Title of article

    Growth of bulk SiC

  • Author/Authors

    Tairov، نويسنده , , Yu.M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1995
  • Pages
    7
  • From page
    83
  • To page
    89
  • Abstract
    The problems of growing SiC ingots with LETI methods are considered in this paper. The analysis of factors influenced by conditions of different polytype modification crystals growing is conducted. Comparative characteristics of growing processes of crystals with the LETI method and the Lely method are obtained.
  • Keywords
    LETI method , Lely method , silicon carbide , Single-crystal growth
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1995
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2130830

    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=10&DC=2130830