Macrodefect formation in semiconductors during high energy ion implantation: Monte Carlo simulation of damage depth distributions

A quantitative model describing macrodefect formation during ion implantation in the energy region 0.1 – 1.0 MeV amu−1 has been proposed on the basis of the Coulomb explosion approach. In the presented model, (i) the ionization cross-sections were calculated using realistic atomic configurations and velocity distributions of electrons in the target: and (ii) the distribution of the space charge formed was calculated in the classical approximation of ion-electron interactions. Calculated damage depth distributions were in good agreement with those obtained by luminescent centre measurements in diamond and observed by cross-section transmission electron microscopy of Si.