Title of article :
Theoretical investigation of the pressure dependences of energy gaps in InAs and InSb
Author/Authors :
Bouarissa، نويسنده , , N. and Aourag، نويسنده , , H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Abstract :
The observed dependences on pressure of the energy gaps in InAs and InSh at symmetry points in the Brillouin zone are successfully calculated using an empirical method based on the pseudopotential method. The negative pressure derivatives of the gaps at the X points of the conduction band relative to the valence band maxima are due to the d states.
Keywords :
Bond structure calculations , Electron states , Semiconductors , Phase transitions
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B