Solid phase epitaxial regrowth of Si1−xGex layers formed by single-energy Ge+, double-energy Si+ and Ge+, and Ge+ and Ge2+ ion implantations

Si1−xGex layers were formed using single-energy Ge+implantation, double-energy Si+ and Ge+ implantation, and double-energy Ge+ and Ge2+ implantation. All the amorphized samples were epitaxialy regrown at 600 °C. Rutherford backscattering (RBS) channelling measurements confirm that the double-energy Ge+ and Ge2+ method is the best of these three implantation processes because it generates fewer residual defects and provides a flexible spatial separation between the Ge profile maximum and the original amorphous/crystalline (a/c) interface. The preliminary results on the regrowth properties of the double-energy Ge+ and Ge2+ implanted SiGe layer are presented.