Barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) prepared by molecular beam epitaxy

We demonstrate for the first time a three-terminal barrier-modulated GaAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojunction triangular barrier exhibiting S-shaped negative differential resistance and voltage-controlled switching performance, prepared by molecular beam epitaxy (MBE). The modulation of the internal barrier affects the d.c. switching behavior profoundly. A functional OR logic, employing two barrier-modulated QWOES connected in parallel, has been implemented. The wavelength in this strained quantum well GaAs/InGaAs structure is centered from 980 nm to 1040 nm and belongs to an IR light-emitting diode (LED). The light output power saturates in the region of 73.57 μW with an ON-state current of 250 mA.