Author/Authors :
David، نويسنده , , J.P.R. and Sale، نويسنده , , T.E. and Pabla، نويسنده , , A.S. and Rodrيquez-Gironés، نويسنده , , P.J. and Woodhead، نويسنده , , J. and Grey، نويسنده , , R. and Rees، نويسنده , , G.J. and Robson، نويسنده , , P.N. and Skolnick، نويسنده , , M.S. and Hogg، نويسنده , , R.A.، نويسنده ,
Abstract :
We have studied the room temperature (RT) photoluminescence (PL) in a series of InGaAsGaAs structures grown on (111)B GaAs substrates. Unlike conventional (100) grown multi-quantum well (MQW) p-i-n structures, the RT PL peak position and lineshape in (111)B grown structures are determined by details of the barrier width, intrinsic region thickness and number of wells. The PL is also found to be extremely sensitive to excitation power, making interpretation of the results complicated.
Keywords :
P-i-N diodes , Semiconductors , Piezoelectric , (111)B
