InN thin-film growth using an ECR plasma source

An electron-cyclotron-resonance (ECR) plasma source is used in a InN thin-film growth process by reactive evaporation. Some properties of prepared films are measured and compared with those of InN films grown using radio frequency (RF) plasma. Deteriorations of surface morphology and crystallinity of the films are not observed even when their growth rate is extremely low. Dependences of the film properties on other parameters, such as distance between the ECR source and substrates, or orifice size of the ECR source, are also investigated. Moreover, some plasma parameters of the ECR source are compared with those of the RF plasma by optical emission spectroscopy and Langmuir probe measurements.