Spontaneous anisotropic chemical etching as a nanostructure surface modification method for the AIIIBV semiconductors

The morphology and physical peculiarity of the AIIIBV semiconductor (GaAs, InAs, InSb, InP) surfaces and their modification by spontaneous anisotropic chemical etching was investigated. Spontaneous anisotropic chemical etching is a local heterogeneous process which converts mirror flat surfaces of semiconductors into rough and black one with habitus (natural) shape frame, and with a high degree of homogeneity of properties. The possibility of producing microrelief surfaces of semiconductors with controlled optical, electrophysical and photoelectric properties have been shown. The materials were investigated by various techniques: photoluminescence, Auger spectra, and scanning electron microscope analysis. sults of applying the nanostructure surface modification method to improve photodetector characteristics (sensitivity and spectral region) have been presented.