Title of article :
Charge capture in AlGaAsGaAs heterostructures with disordered antidot lattice
Author/Authors :
Basmaji، نويسنده , , P. and Gusev، نويسنده , , G.M. and Lubyshev، نويسنده , , D.I. and de P.A. Silva، نويسنده , , M. and Rossi، نويسنده , , J.C. and Nastaushev، نويسنده , , Yu.V. and Baklanov، نويسنده , , M.R.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1995
Pages :
3
From page :
322
To page :
324
Abstract :
We have observed hot electron trapping by DX centers in a mesoscopic sample with disordered antidot lattice. Depending on the maximum applied electric field the potential barriers for trajectories along the sample will increase. The maximum total captured charge is approximately equal to 50 electron.
Keywords :
Heterostructures
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1995
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2131305
Link To Document :
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