Photoluminescence properties of AlAsGaAs disordered superlattices with fixed GaAs or AlAs layer thickness

We have shown that disordered superlattices (d-SLs) possess a remarkably enhanced photoluminescence (PL) capability. The d-SLs have a disorderly distributed layer thickness which is selected from 2, 4, and 6 molecular layers (MLs). We investigate the effects of a 6 ML GaAs layer, which is the widest well width, through d-SLs with fixed GaAs or AlAs layer thickness. PL thermal quenching properties are measured for the investigation. The enhanced PL capability is caused not by the existence of the 6 ML GaAs layer but by the number of disorderly distributed layer patterns. The effect of the number of disorderly distributed layer patterns is also investigated through the d-SL with fixed AlAs layer thickness.