Modulation characteristics of AlAsGaAs double barrier quantum well resonant tunneling structure at microwave frequencies

We report the oscillation characteristics of a resonant tunneling diode oscillator (RTDO) in AlAsGaAs double barrier quantum well structure. Under the illumination of a Ti:Sapphire laser, the direct current-voltage curve shifts toward lower voltages. The oscillation frequency linearly decreases as the laser power increases at a constant bias voltage. These results suggest that the oscillation frequency of RTDOs can be controlled by the laser illumination.