Title of article
Modulation characteristics of AlAsGaAs double barrier quantum well resonant tunneling structure at microwave frequencies
Author/Authors
Chu، نويسنده , , H.Y. and Park، نويسنده , , P.W and Lee، نويسنده , , E.H.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1995
Pages
3
From page
446
To page
448
Abstract
We report the oscillation characteristics of a resonant tunneling diode oscillator (RTDO) in AlAsGaAs double barrier quantum well structure. Under the illumination of a Ti:Sapphire laser, the direct current-voltage curve shifts toward lower voltages. The oscillation frequency linearly decreases as the laser power increases at a constant bias voltage. These results suggest that the oscillation frequency of RTDOs can be controlled by the laser illumination.
Keywords
resonant tunneling , Photogenerated carriers , Microwave oscillator , Double barrier quantum well structure
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1995
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131330
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