Activation energies for the formation of oxygen clusters related to the thermal donors in silicon

The formation of different oxygen clusters related to the thermal donors (TDs) in Czochralski-Si giving rise to IR vibrational modes were investigated after annealing in the range 350–470 °C. Activation energies for the formation of clusters related to TDs ⩾ TD2 were estimated to be about 1.6–1.9 eV, according to previous investigations, while a lower value of about 1.25 eV was found for the formation of TD1-related clusters. The activation energy for the growth of pre-existing clusters with a band at 1012 cm−1 was estimated to be about 1.5 eV.