Title of article :
Stress-induced oxygen precipitation in CzSi
Author/Authors :
Misiuk، نويسنده , , A. and Surma، نويسنده , , B. and Hartwig، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Abstract :
Stress-induced oxygen precipitation effects in silicon were investigated after annealing as-grown CzSi samples at up to 1620 K under hydrostatic pressure up to 1.35 × 109 Pa. Depending on the treatment conditions, uniform stress can considerably influence oxygen precipitation. An explanation of stress-stimulated oxygen precipitation is proposed.
Keywords :
high pressure , Silicon , oxygen precipitation , Defect formation
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
