Title of article :
The complexing of oxygen with the Group II impurities Be, Cd and Zn in silicon
Author/Authors :
Daly، نويسنده , , S.E. and McGlynn، نويسنده , , E. and Henry، نويسنده , , M.O. and Campion، نويسنده , , J.D. and McGuigan، نويسنده , , K.G. and do Carmo، نويسنده , , M.C. and Nazaré، نويسنده , , M.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Abstract :
The results of a photoluminescence study of the Group II elements Be, Cd and Zn in silicon show that oxygen-rich samples contain defects not observed in oxygen-lean material. Uniaxial stress and Zeeman measurements show that all the defect spectra are similar and pseudo-donor in nature. The defects are attributed to complexes of oxygen and the Group II impurity.
Keywords :
Oxygen , Group II elements , Silicon , Photoluminescence
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
