Author/Authors :
Kirscht، نويسنده , , F.G. and Furukawa، نويسنده , , Y. and Seifert، نويسنده , , W. F. Schmalz Jr.، نويسنده , , K. and Buczkowski، نويسنده , , A. and Kim، نويسنده , , S.B. and Abe، نويسنده , , H. and Koya، نويسنده , , H. and Bailey، نويسنده , , J.، نويسنده ,
Abstract :
Gate oxide integrity (GOI) tests, surface photovoltage and deep level transient spectroscopy of Czochralski silicon wafers reveal oxide degradation at heavy precipitation, defect-controlled recombination lifetime and defect-induced deep levels. Electron beam induced current measurements on those wafers before and after intentional metal decoration reveal relatively shallow levels in the non-decorated state and deep levels in the decorated state. It is shown that the actual contamination level determines the usefulness of GOI tests for predicting material performance in device processing.
Keywords :
Recombination lifetime , Oxide integrity , Bulk defect , Cz silicon
