Surface morphology due to enhanced migration in heteroepitaxial growth of compound semiconductors

Monte Carlo technique and Valence force field approximation are used to investigate the heteroepitaxial growth with high lattice mismatch. It is shown that the growing surface becomes rough very rapidly. Its morphology is stabilized and shows V-grooves with (111) facets. The grooves are filled with highly mobile liquid-like atoms that can be incorporated in stable solid-like positions through collective motions and reactions.