Stoichiometric disturbances in multi-atomic multilayered structures due to ion implantation through mask openings

In this paper, a Monte Carlo computer code based on the linear cascade theory has been used to calculate Stoichiometric disturbances in multi-atomic multilayered structures. The two-dimensional excess interstitials distribution and the two-dimensional oxygen-recoil-atoms distribution in silicon substrate resulting from a 50 keV Ge + ion implantation through a thick window mask and an oxide mask window presenting tapered edge are presented. We calculate through computer simulation, the redistribution of target atoms in the vicinity of the mask edges that will influence the production of end-of-range defects in an annealing step. Recoil implantation of oxygen atoms in silicon over tens of angstroms during ion implantation through an oxide mask window is also evidenced.