New trends in atomic scale simulation of wet chemical etching of silicon with koh

A new atomic scale model has been developed to simulate anisotropic etching of silicon in KOH solutions. This model is based on the influence of the number of hydroxide groups attached to atoms. Etch rates and macroscopic activation energies have been calculated and compared with experimental data. Microscopic surface roughness has been investigated for 〈100〉 and 〈111〉 surface.