Passivation of dopants in InGaP using ECR hydrogenation

Hydrogen passivation of Zn acceptors and Si donors in In0.49Ga0.51P layers has been examined as a function of the microwave power (0–1000 W) and process pressure (1–10 mTorr) of electron cyclotron resonance H2 discharges. The dopant passivation is much stronger in p-type InGaP than in n-type materials for all plasma conditions, which we ascribe to the more stable bond-centred position for hydrogen in p-InGaP. Reactivation of the passivated dopants begins at ⩽ 300 °C and is complete by 400 °C in n-type material and 450 °C in p-type material.