Simulation studies of liquid phase epitaxial growth of In1 −xGaxAs

The concentration profiles of As and Ga at successive equally spaced layers in front of an InGaAs crystal growing under normal conditions of liquid phase epitaxy have been simulated using the appropriate boundary conditions based on the diffusive transport model. The concentration gradient at the interface has been used to calculate the growth rate. The thickness of the film grown and its composition as a function of growth parameters such as cooling rate, time and temperature of the system have been studied. It is observed that the cooling rate has almost no effect on the mole fraction of.the ternary grown at various growth temperatures whereas the cooling rate affects the thickness of the film grown at different temperatures and at different times. It is seen that the composition of the ternary depends on the thickness of the solid layers grown and cooling rate. Our theoretical predictions have been compared with experimentally reported values and the results are discussed in detail.