Title of article :
Evaluation of quantum efficiency of porous silicon photoluminescence
Author/Authors :
Skryshevsky، نويسنده , , V.A. and Laugier، نويسنده , , A. and Strikha، نويسنده , , V.I. and Vikulov، نويسنده , , V.A.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Abstract :
The influence of photoluminescence of top porous silicon layer on deep p-n junction photocurrent is studied. The measurement of additional photocurrent caused by adsorption of porous silicon emission is shown to allow evaluation of the external quantum efficiency of photoluminescence. This can reach approximately 4% on n-Si upon illumination by the short wavelength tail of air mass (AM) 1.5 spectra.
Keywords :
Porous silicon , Photoluminescence , solar cell
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
