Title of article :
Study of copper aggregations at dislocations in Gaas
Author/Authors :
Leipner، نويسنده , , H.S. and Scholz، نويسنده , , R. and Syrowatka، نويسنده , , F. and Uniewski، نويسنده , , Rajendra H. and Schreiber، نويسنده , , J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
4
From page :
185
To page :
188
Abstract :
In copper diffused gallium arsenide cathodoluminescence investigations were combined with analytical and transmission electron microscopy in order to interpret the occurrence of bright or dark dislocation contrasts. Various structures of Cu agglomerations were found in dependence on diffusion temperature and cooling rate. Bright dislocation contrasts are related to the enrichment of solute CuGa acceptors, whereas dark contrasts are mainly due to non-radiative recombination of Cu-As precipitates or clouds of small dislocation loops.
Keywords :
Dislocation , Copper , Gallium arsenide
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1996
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2131908
Link To Document :
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