Title of article
Effect of irradiation in sem on electrical properties of silicon
Author/Authors
Feklisova، نويسنده , , O.V. and Yakimov، نويسنده , , E.B. and Yarykin، نويسنده , , N.A.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1996
Pages
3
From page
274
To page
276
Abstract
The defect formation in gold doped n-Si under the irradiation by electrons with the subthreshold energy or light illumination have been studied by the deep level transient spectroscopy (DLTS) technique. The formation of three at least new electrically active defects was observed. It has been shown that Ec-0.20 energy level is associated with hydrogen-gold complex. Both the treatments used were found to stimulate hydrogen transport in silicon.
Keywords
Scanning electron microscopy , Energy level , Deep level transient spectroscopy
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1996
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2131954
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