Title of article :
Dose effects of cathodoluminescence in SiO2 layers on Si
Author/Authors :
Goldberg، نويسنده , , M. E. Trukhin، نويسنده , , A. and Fitting، نويسنده , , H.-J.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1996
Pages :
4
From page :
293
To page :
296
Abstract :
Cathodoluminescence (CL) of thermal SiO2 layers is performed in a digital scanning electron microscope (SEM) and wavelength, dispersed registered by a CCD-camera. The CL-spectrum of SiO2 shows three characteristic bands at 650 nm (red), 460 nm (blue) and 285 nm (UV) that all change their intensity during the time of electron bombardment. This different excitation dose behaviour of the luminescence bands was investigated in a wide range of current densities (10−5–10−3 A cm−2) and temperatures (90–500 K). Some interpretation is made by a model of precursor transformation and quenching. The UV and blue luminescence is attributed to twofold-coordinated silicon in SiO2. Contrary to thermal SiO2 films TEOS-CVD SiO2 shows only the red band which is generally associated with non-bridging oxygen.
Keywords :
cathodoluminescence , Silicon dioxide , Electron bombardment
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Serial Year :
1996
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Record number :
2131962
Link To Document :
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