Title of article :
Electronic structure and temperature dependence of excitons in GaN
Author/Authors :
Monemar، نويسنده , , B. and Buyanova، نويسنده , , I.A. and Bergman، نويسنده , , J.P. and Amano، نويسنده , , H. and Akasaki، نويسنده , , I.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
The influence of epitaxial strain and temperature on free exciton properties for GaN is discussed, in relation to optical spectra. The exciton-polariton coupling is also briefly discussed, from the temperature dependence of the LO phonon replicas.
Keywords :
Bound exciton , Photoluminescence , Electronic structure
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
