• Title of article

    Electric field effects on excitons in gallium nitride

  • Author/Authors

    Duboz، نويسنده , , J.Y. and Binet، نويسنده , , F. and Rosencher، نويسنده , , E. and Scholz، نويسنده , , F. and Hنrle، نويسنده , , V.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 1997
  • Pages
    5
  • From page
    269
  • To page
    273
  • Abstract
    Electric field effects on Wannier excitons are observed for the first time in GaN thin films. Using both absorption and photocurrent measurements, we have studied the excitonic Franz-Keldysh effect in thin epitaxial GaN films at temperatures between 80 and 300 K. We have measured the Stark shift, quenching and broadening of the exciton peak with applied field. These results are compared with theoretical calculations from the literature. The physics of exciton ionization at varying temperatures is discussed which explains the interplay between absorption and photocurrent. An UV modulator based on the excitonic Franz-Keldysh effect is demonstrated.
  • Keywords
    Photocurrent measurements , Gallium nitride , Thin films
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Serial Year
    1997
  • Journal title
    MATERIALS SCIENCE & ENGINEERING: B
  • Record number

    2132091