Title of article
Electric field effects on excitons in gallium nitride
Author/Authors
Duboz، نويسنده , , J.Y. and Binet، نويسنده , , F. and Rosencher، نويسنده , , E. and Scholz، نويسنده , , F. and Hنrle، نويسنده , , V.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
269
To page
273
Abstract
Electric field effects on Wannier excitons are observed for the first time in GaN thin films. Using both absorption and photocurrent measurements, we have studied the excitonic Franz-Keldysh effect in thin epitaxial GaN films at temperatures between 80 and 300 K. We have measured the Stark shift, quenching and broadening of the exciton peak with applied field. These results are compared with theoretical calculations from the literature. The physics of exciton ionization at varying temperatures is discussed which explains the interplay between absorption and photocurrent. An UV modulator based on the excitonic Franz-Keldysh effect is demonstrated.
Keywords
Photocurrent measurements , Gallium nitride , Thin films
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132091
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