Prismatic defects in GaN grown on 6H-SiC by molecular beam epitaxy

The atomic structure of the prismatic defects in GaN layers grown on 6H-SiC by electron cyclotron assisted MBE has been determined. High resolution images have been matched to Drumʹs model, which, along the [0001] projection, corresponds to 8 and 4 atoms cycles. The 1/2〈101〉 fault vector is parallel to the fault plane.