Investigation of growth temperature dependent GaInP ordering in different crystal planes using X-ray diffraction and photoluminescence

Ga0.51In0.49P grown by metal-organic vapor-phase epitaxy exhibits a growth temperature dependent ordering effect. High resolution X-ray diffraction analysis on different lattice planes of Ga0.51In0.49P samples grown at various temperatures from 600 to 730 °C results in the following interpretation: (i) the size of ordered domains continuously enlarges with increasing growth temperature, whereas (ii) the degree of ordering is maximum at about 660–680 °C. This result has been proven by transmission electron microscopy. Photoluminescence in Ga0.51In0.49P exhibits a strong dependence of emission energy on excitation intensity (blue-shift). The influence of sample growth temperature on the slope of the PL peak blue-shift is correlated to the size of ordered domains and the degree of ordering in ordered domains.