Title of article :
Cathodoluminescence characterization of a compound semiconductornative dielectric interface
Author/Authors :
Berchenko، نويسنده , , N.N. and Izhnin، نويسنده , , I.I. and Savchyn، نويسنده , , V.P. and Stakhira، نويسنده , , J.M. and Voitsekhovskii، نويسنده , , A.V.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 1997
Abstract :
The possibilities of cathodoluminescence spectroscopy are illustrated by examples of the investigation of the oxide-semiconductor structures obtained by different oxidation techniques of group II, III and IV chalcogenides. The cathodoluminescence results are used directly for the phase identification and their spatial distribution determination in the oxide layer and at the interface with the semiconductor.
Keywords :
Cathodoluminescence spectroscopy , X-ray photoelectron spectroscopy , Auger electron spectroscopy , Metal oxide semiconductor
Journal title :
MATERIALS SCIENCE & ENGINEERING: B
Journal title :
MATERIALS SCIENCE & ENGINEERING: B