Title of article
Semi-insulating LEC GaAs sub strates with an improved macroscopic and mesoscopic homogeneity
Author/Authors
Jurisch، نويسنده , , M. and Flade، نويسنده , , T. and Hoffmann، نويسنده , , B. and Kِhler، نويسنده , , A. and Korb، نويسنده , , J. and Kretzer، نويسنده , , U. and Reinhold، نويسنده , , Th. and Weinert، نويسنده , , B.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 1997
Pages
5
From page
198
To page
202
Abstract
A semi-quantitative understanding of the thermochemistry of boron oxide gettering ability and the influence of gas phase composition on the GaAs-melt in synthesis and growth allows LEC-growth of carbon controlled semi-insulating GaAs-crystals on a production scale. By optimization of thermal growth conditions and of a two-step post-growth ingot annealing procedure the scatter of electrical parameters among crystals has been significantly reduced and the homogeneity of individual crystals on a macroscopic and mesoscopic scale has been improved.
Keywords
Macroscopic and mesoscopic homogeneity , Gallium arsenide , Crystal inhomogeneity
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Serial Year
1997
Journal title
MATERIALS SCIENCE & ENGINEERING: B
Record number
2132209
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