Characterization of molecular beam epitaxy p-CdxHg1 − xTe layers using the photoconductive effect in crossed fields

The photoconductive effect in crossed E → ⊥ B → fields together with the conventional photo-Hall method and multicarrier analysis were used for the characterization of thin p-CdxHg1 − xTe layers grown by molecular beam epitaxy (MBE). The described techniques provided information about recombination parameters of the films: surface recombination velocities, bulk lifetime and diffusion length.