Physicochemical characterization of MoS2 films obtained by solid state reaction between the constituents of a multilayer Mo/S…/Mo/S structure

MoS2 films were obtained by solid state reaction—induced by annealing—between the Mo and S constituents of a multilayer structure (Mo/S/Mo…Mo/S). The films were investigated by X-ray diffraction (XRD), scanning and transmission electron microscopy (SEM, TEM), optical absorption and electrical measurements. It was found that, at the end of the process, the films were well crystallized and stoichiometric. MoS2, in hexagonal form, was obtained by annealing for 24 h at 853 K. However, it can be seen by SEM that, if the first 100 nm of the films were perfectly oriented, the upper part of the films was not. The first 100 nm were textured, the crystallites had their c axis perpendicular to the plane of the substrate. The upper part was more randomly oriented and more porous. Its crystallites were very small and preferentially oriented with their c axis parallel to the plane of the substrate. XRD, TEM and conductivity characterization were in good accordance with SEM results.