Transmission electron microscope observations of dislocations in heteroepitaxial layers of CdTe-(CdHg)Te on GaAs

Growth of (CdHg)Te on GaAs has been performed by metal-organic vapor phase epitaxy (MOVPE) with ZnTe as a buffer. The various steps of the deposition have been studied by transmission electron microscopy with a special emphasis on dislocation generation. The high density of dislocations is a consequence of the large misfit between the substrate and the II–VI semiconductors. The intercalation of strained layers is not under control in order to decrease the number of dislocations in the upper part of the system.